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MSD4N60SJ
Super Junction
4A/ 600V MOSFET


Very low RDS(on) for increased application efficiency
Standard, logic and ultra level threshold for increased design flexibility

Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested

Application
SMPS, Power Supplier, LED Lighting

Description
These devices are N-channel Power MOSFETs developed using a new generation of super junctionMOSFET technology: These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
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Taiwan302Hsinchu CountyHsinchu County/City, Taiwan6F.-1, No.65, Gaotie 7th Rd.


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