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Boost optimized
Schottky Diode Design
The main parameters of Schottky diodes were defined in the past were forward voltage and reverse leakage current. Two large contributors to these specifications are the Schottky barrier metal and the Schottky contact area. Since the parameters share a dependence on the same variables, there is a trade-off between the two. As the forward voltage is reduced, the reverse leakage current is increased, and vice versa. As the industry has driven to lower and lower forward voltages, the reverse leakage currents have been steadily increasing. It has now reached a point where additional reductions in forward voltage result in larger increases to the reverse leakage current, resulting in higher overall power dissipation. Nevertheless, it is still common to think that the forward voltage is the main contributor to the power dissipation and reverse leakage current is of less importance; this is not necessarily true anymore.
The importance of defining Schottky diodes based on power dissipation rather than individual device characteristics is now even more important as the trade-off between forward voltage and reverse leakage is becoming larger. Consider the VF and IR are same important, Bruckewell develop the new optimized boost Schottky diodes based on power dissipation that will allow system designers to maximize battery lifetime in portable applications. It will be good for wireless, wearable, PoE and relation devices application.

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Taiwan302Hsinchu CountyHsinchu County/City, Taiwan6F.-1, No.65, Gaotie 7th Rd.


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